Patent US Atomic layer deposition of .
The use of atomic layer deposition ... Genus, Inc. Apparatus and method ... "Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides", Chem. Mater. 16, ...
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The use of atomic layer deposition ... Genus, Inc. Apparatus and method ... "Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides", Chem. Mater. 16, ...
In an embodiment, a zirconium silicon oxide film is formed by atomic layer deposition using a zirconium precursor containing silicon and a silicon precursor.
Forming the dielectric structure includes depositing hafnium oxide using atomic layer deposition ... a insulating layer ... Atomic layer deposition of zirconium ...
Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium silicon ...
A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to ... Atomic layer deposition of capacitor ... hafnium oxide and zirconium ...
Atomic layer deposited barium strontium titanium oxide films ... both atomic layer deposited barium strontium titanium ... "Atomic Layer Deposition of Zirconium ...
The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination ...
Dec 16, 2003· Method for forming Lshaped spacers with precise width control ... are formed by atomic layer deposition ... hafnium oxide, and zirconium ...
A plurality of cycles of a first atomic layer deposition ... In situ deposition of different metalcontaining films using ... the deposition of zirconium and hafnium ...
Methods of using atomic layer deposition to deposit a high dielectric constant material on ... zirconium oxide atomic layer ... Atomic layer deposition of hafnium ...
Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium ...
... includes forming a layer of zirconium oxide by atomic layer deposition. ... for atomic layer deposition of hafniumcontaining high ... an insulating metal oxide ...
A gate dielectric is formed by atomic layer deposition employing a hafnium ... Method for forming a gate insulating ... "Atomic Layer Deposition of Zirconium ...
364 rows· Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. .
FIG. 1 depicts all atomic layer deposition system for ... including an insulating layer having a hafnium ... Deposition of hafnium oxide and/or zirconium oxide and ...
The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds.
Method for making a hafniumbased insulating film: US: ... Genus, Inc. Apparatus and method ... Atomic layer deposition of zirconium .
Mar 22, 2012· A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate ...
... on the hafnium metal layer by atomic layer deposition form a hafnium oxide dielectric ... ferroelectrics in insulating layer: ... Atomic layer deposited ...
Genus, Inc. Radicalassisted ... Apparatuses and methods for atomic layer deposition of hafniumcontaining highk ... Insulating film formation method which exhibits ...
Jan 27, 2009· Deposition methods for forming silicon oxide layers ... "Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis ... An insulating layer 16, ...
Sep 26, 2006· A method of forming (and apparatus for forming) a zirconium and/or hafniumcontaining layer on a substrate, particularly a semiconductor substrate or ...
Dec 24, 2008· SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM ... is an atomic layer deposition ... deposition process. The zirconium, hafnium.
Aug 26, 2008· Atomic layer deposition systems and methods including metal betadiketiminate compounds
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